Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low resistivity poly-silicon gate produced by selective metal growth

Low resistivity poly-silicon gate produced by selective metal growth

US Patent 6184129 · Granted Feb 6, 2001

Estimated economic value: $64,248,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetic tape integration with distributed disk file systems2022
Low stress sacrificial cap layer2015
Method and apparatus for inducing turbulent flow of a processing chamber cleanin2014
Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial2014
Nickel silicide formation for semiconductor components2013
Cleaning plate for inducing turbulent flow of a processing chamber cleaning glas2012
Method of forming capacitors2012
Method of forming capacitors2012
Capacitor formed on a recrystallized polysilicon layer2011
CMP pad thickness and profile monitoring system2011
Extended pad life for ECMP and barrier removal2011
Methods and apparatus for processing a substrate2011