Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Correction of pattern-dependent errors in a particle beam lithography system

Correction of pattern-dependent errors in a particle beam lithography system

US Patent 6177680 · Granted Jan 23, 2001

Estimated economic value: $22,404,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electron optical system and multi-beam image acquiring apparatus2023
High-resolution multiple beam source2023
Multiple electron beams irradiation apparatus2021
Multiple electron beams irradiation apparatus2021
Deflector for multiple electron beams and multiple beam image acquiring apparatu2021
Multiple electron beam irradiation apparatus, multiple electron beam inspection 2020
Nonribosomal peptide synthetases2018
Nonribosomal peptide synthetases2016
Methods for fabricating three-dimensional nano-scale structures and devices2015
Methods, devices, and systems for manipulating charged particle streams2014
Photomask design verification2012
Method for optimization of optical proximity correction2010