Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Synthetic spin-valve device having high resistivity anti parallel coupling layer

Synthetic spin-valve device having high resistivity anti parallel coupling layer

US Patent 6175476 · Granted Jan 16, 2001

Estimated economic value: $13,918,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nonvolatile memory device including dual memory layers2025
Nonvolatile memory device including dual memory layers2025
Shielding of packaged magnetic random access memory2025
Multilayered seed for perpendicular magnetic structure including an oxide layer2024
Magnetic memory element including perpendicular enhancement layers and dual oxid2024
Multilayered seed for perpendicular magnetic structure including an oxide layer2023
Magnetic memory element incorporating dual perpendicular enhancement layers2023
Memory system having thermally stable perpendicular magneto tunnel junction (MTJ2023
Magnetic memory element incorporating dual perpendicular enhancement layers2022
Multilayered seed for perpendicular magnetic structure2022
Multilayered seed for perpendicular magnetic structure2021
Magnetic memory element incorporating perpendicular enhancement layer2021