Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic memory element incorporating dual perpendicular enhancement layers

Magnetic memory element incorporating dual perpendicular enhancement layers

US Patent 11417836 · Granted Aug 16, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory cell including two selectors and method of making same2025
Nonvolatile memory device including dual memory layers2025
Nonvolatile memory device including dual memory layers2025
Nonvolatile memory device including dual memory layers2025
Nonvolatile memory device including dual memory layers2025
Shielding of packaged magnetic random access memory2025
Shielding of packaged magnetic random access memory2025
Multilayered seed for perpendicular magnetic structure including an oxide layer2024
Multilayered seed for perpendicular magnetic structure including an oxide layer2024
Magnetic memory element including perpendicular enhancement layers and dual oxid2024
Magnetic memory element including perpendicular enhancement layers and dual oxid2024
Fault tolerance decision-making method and system for sensor failure of vehicula2024