Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for etch rate enhancement by background oxygen control in a soft etch system

Method for etch rate enhancement by background oxygen control in a soft etch system

US Patent 6143144 · Granted Nov 7, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for increasing adhesion of copper to polymeric surfaces2016
Substrate processing pallet with cooling2015
CVD of tantalum and tantalum nitride films from tantalum halide precursors2005
Electrical coupling between chamber parts in electronic device processing equipm2004
Electronic device processing equipment having contact gasket between chamber par2004
PECVD of Ta films from tanatalum halide precursors2002
CVD of integrated Ta and TaNx films from tantalum halide precursors2002
Thermal CVD of TaN films from tantalum halide precursors2002
Plasma treated thermal CVD of TaN films from tantalum halide precursors2001
PECVD of TaN films from tantalum halide precursors2001
Method and apparatus for insulating a high power RF electrode through which plas2001
Method for halide etching in the presence of water of semi-conductor substrates1992