Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a film by using plasmanized process gas containing gaseous H.sub.2 O and an auxiliary gas in a semiconductor device

Method of forming a film by using plasmanized process gas containing gaseous H.sub.2 O and an auxiliary gas in a semiconductor device

US Patent 6133162 · Granted Oct 17, 2000

Estimated economic value: $186,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal member, processing system, and method for manufacturing metal member2025
Roller unit of crawler travel unit, crawler travel unit, and work machine2024
Tracked undercarriage component, and method for producing the same2024
Processing system and method for manufacturing metal member2024
Method for producing prepreg and method for producing fiber-reinforced composite2023
Production method for prepreg, prepreg tape, and fiber reinforced composite mate2023
Prepreg manufacturing method and manufacturing apparatus2022
Production method for prepreg, prepreg tape, and fiber reinforced composite mate2022
Throwaway insert2022
Production method and coating device for coating-liquid-impregnated sheet-like r2022
Production method for prepreg, and production method for fiber-reinforced compos2021
Coating-liquid-impregnated fiber-reinforced fabric, sheet-shaped integrated obje2021