Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage

Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage

US Patent 6091108 · Granted Jul 18, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Battery assembly with controllable voltage and method related thereto2025
Adapting a vehicle control strategy based on historical data related to a geogra2021
Engine control unit2021
Systems, devices, and methods for tracking and compensating for patient motion d2020
Adapting a vehicle control strategy based on historical data related to a geogra2019
Engine control unit2019
System to quantify and visualize ventricular rotation pattern of the heart2015
Process and device for detection of precancer tissues with infrared spectroscopy2013
Process for preserving three dimensional orientation to allow registering histop2013
Image analysis for cervical neoplasia detection and diagnosis2013
Methods of contrast enhancement for images having blood vessel structures2013
High resolution digital video colposcope with built-in polarized LED illuminatio2012