Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to improve the breakdown voltage of P-channel devices

Method to improve the breakdown voltage of P-channel devices

US Patent 6033960 · Granted Mar 7, 2000

Estimated economic value: $81,167,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Isolation between semiconductor components2019
Isolation between semiconductor components2017
Schottky diode structure to reduce capacitance and switching losses and method o2008
Current integrating sense amplifier for memory modules in RFID2004
Process for making a non-volatile memory cell with a polysilicon spacer defined 2002
Method for forming field oxide regions1997
Method of making a memory array with field oxide islands eliminated1996
Memory array with field oxide islands eliminated and method1995