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Home › Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer

Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer

US Patent 6028345 · Granted Feb 22, 2000

Estimated economic value: $71,303,000 ⓘ

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