F. Scott Johnson — 20 Patents at Texas Instruments

F. Scott Johnson has been granted 20 US patents while listed as an inventor at Texas Instruments. The first was granted in 1996 and the most recent in August 2009. F. Scott Johnson ranks #214,803 of 4,157,543 US inventors in our database (top 5.2%). Patent records list F. Scott Johnson in Plano, TX, US.

Issued Patents All Time

Showing 1–20 of 20 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
7572693	Methods for transistor formation using selective gate implantation	Tad Grider, Benjamin P. McKee	2009-08-11	$10,923,000
7098098	Methods for transistors formation using selective gate implantation	Tad Grider, Benjamin P. McKee	2006-08-29	$16,743,000
6682994	Methods for transistor gate formation using gate sidewall implantation	Tad Grider, Benjamin P. McKee	2004-01-27	$41,018,000
6645804	System for fabricating a metal/anti-reflective coating/insulator/metal (MAIM) capacitor	Luigi Columbo, Doug Prinslow, Kelly Taylor, Van-Joy Tsai	2003-11-11	$18,962,000
6620700	Silicided undoped polysilicon for capacitor bottom plate	Douglas A. Prinslow	2003-09-16	$22,828,000
6501152	Advanced lateral PNP by implant negation	—	2002-12-31	$29,322,000
6441715	Method of fabricating a miniaturized integrated circuit inductor and transformer fabrication	—	2002-08-27	$22,508,000
6380609	Silicided undoped polysilicon for capacitor bottom plate	Douglas A. Prinslow	2002-04-30	$26,893,000
6281530	LPNP utilizing base ballast resistor	—	2001-08-28	$65,117,000
6248650	Self-aligned BJT emitter contact	—	2001-06-19	$43,385,000
6239477	Self-aligned transistor contact for epitaxial layers	—	2001-05-29	$53,711,000
6194280	Method for forming a self-aligned BJT emitter contact	—	2001-02-27	$49,570,000
6030874	Doped polysilicon to retard boron diffusion into and through thin gate dielectrics	Douglas T. Grider, Stanton Petree Ashburn, Katherine E. Violette	2000-02-29	$108,931,000
6028345	Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer	—	2000-02-22	$71,303,000
5629556	High speed bipolar transistor using a patterned etch stop and diffusion source	—	1997-05-13	$8,357,000
5616508	High speed bipolar transistor using a patterned etch stop and diffusion source	—	1997-04-01	$13,142,000
5593905	Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link	Kelly Taylor	1997-01-14	$7,359,000
5592017	Self-aligned double poly BJT using sige spacers as extrinsic base contacts	—	1997-01-07	$7,520,000
5541121	Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer	—	1996-07-30	$8,297,000
5502330	Stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link	Kelly Taylor	1996-03-26	$8,052,000

F. Scott Johnson — 20 Patents

Issued Patents All Time

Patent Widget