FJ

F. Scott Johnson

TI Texas Instruments: 20 patents #603 of 12,488Top 5%
Overall (All Time): #225,482 of 4,157,543Top 6%
20
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7572693 Methods for transistor formation using selective gate implantation Tad Grider, Benjamin P. McKee 2009-08-11
7098098 Methods for transistors formation using selective gate implantation Tad Grider, Benjamin P. McKee 2006-08-29
6682994 Methods for transistor gate formation using gate sidewall implantation Tad Grider, Benjamin P. McKee 2004-01-27
6645804 System for fabricating a metal/anti-reflective coating/insulator/metal (MAIM) capacitor Luigi Columbo, Doug Prinslow, Kelly Taylor, Van-Joy Tsai 2003-11-11
6620700 Silicided undoped polysilicon for capacitor bottom plate Douglas A. Prinslow 2003-09-16
6501152 Advanced lateral PNP by implant negation — 2002-12-31
6441715 Method of fabricating a miniaturized integrated circuit inductor and transformer fabrication — 2002-08-27
6380609 Silicided undoped polysilicon for capacitor bottom plate Douglas A. Prinslow 2002-04-30
6281530 LPNP utilizing base ballast resistor — 2001-08-28
6248650 Self-aligned BJT emitter contact — 2001-06-19
6239477 Self-aligned transistor contact for epitaxial layers — 2001-05-29
6194280 Method for forming a self-aligned BJT emitter contact — 2001-02-27
6030874 Doped polysilicon to retard boron diffusion into and through thin gate dielectrics Douglas T. Grider, Stanton Petree Ashburn, Katherine E. Violette 2000-02-29
6028345 Reduced resistance base contact for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer — 2000-02-22
5629556 High speed bipolar transistor using a patterned etch stop and diffusion source — 1997-05-13
5616508 High speed bipolar transistor using a patterned etch stop and diffusion source — 1997-04-01
5593905 Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link Kelly Taylor 1997-01-14
5592017 Self-aligned double poly BJT using sige spacers as extrinsic base contacts — 1997-01-07
5541121 Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer — 1996-07-30
5502330 Stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link Kelly Taylor 1996-03-26