Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Multi-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layer

Multi-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layer

US Patent 6017791 · Granted Jan 25, 2000

Estimated economic value: $4,614,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High-speed readout image sensor2025
Image sensor having a gate dielectric structure for improved device scaling2025
Device crack-stop structure to prevent damage due to dicing crack2024
Semiconductor imaging device having improved dark current performance2024
Pellicle having vent hole2024
Semiconductor structure and manufacturing method thereof2024
Pellicle and method of using the same2024
Semiconductor arrangement with capacitor2023
Semiconductor image sensor2023
Semiconductor imaging device having improved dark current performance2022
Pellicle and method of using the same2022
Device crack-stop structure to prevent damage due to dicing crack2022