Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device

Methods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory device

US Patent 6001713 · Granted Dec 14, 1999

Estimated economic value: $4,856,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Micro lens sensor having micro lens heights that vary based on image height2023
Process of forming an electronic device including a non-volatile memory cell2023
Split gate charge trapping memory cells having different select gate and memory 2022
Time-of-flight RGB-IR image sensor2022
Wafer storage device, carrier plate and wafer cassette2022
Memory first process flow and device2022
Memory first process flow and device2022
Resistive change elements using passivating interface gaps and methods for makin2022
Micro lens time-of-flight sensor having micro lens heights that vary based on im2021
Memory device having programmable impedance elements with a common conductor for2021
Reference circuits and methods for resistive memories2021
Charge trapping split gate device and method of fabricating same2021