Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Intermediate layer lithography

Intermediate layer lithography

US Patent 5976769 · Granted Nov 2, 1999

Estimated economic value: $45,316,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for enhanced monitoring of an etch process2004
Shallow drain extenders for CMOS transistors using replacement gate design2002
Using a change in doping of poly gate to permit placing both high voltage and lo2002
Self-aligned trenched-channel lateral-current-flow transistor2001
Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultr2001
Disposable gate/replacement gate MOSFETS for sub-0.1 micron gate length and ultr2000
Self-aligned trenched-channel lateral-current-flow transistor2000
Method of forming a MOSFET using a disposable gate and raised source and drain2000
Method for forming high voltage and low voltage transistors on the same substrat2000
RTP booster to semiconductor device anneal1999
Process for thickening selective gate oxide regions1997
Using a change in doping of poly gate to permit placing both high voltage and lo1995