Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing MOS components having lightly doped drain structures

Method of manufacturing MOS components having lightly doped drain structures

US Patent 5966604 · Granted Oct 12, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Removing an organic sacrificial material from a two-dimensional material2021
Charging prevention method and structure2021
Method of fabricating ferroelectric field-effect transistor2020
Junction FET semiconductor device with dummy mask structures for improved dimens2019
Junction FET semiconductor device with dummy mask structures for improved dimens2017
III-V semiconductor device with interfacial layer2017
Dummy gate for a high voltage transistor device2016
Dummy gate for a high voltage transistor device2015
Junction FET semiconductor device with dummy mask structures for improved dimens2015
Through silicon via structure having protection ring2014
Dummy gate for a high voltage transistor device2013
Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device2013