Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating fully dielectric isolated silicon (FDIS)

Method for fabricating fully dielectric isolated silicon (FDIS)

US Patent 5950094 · Granted Sep 7, 1999

Estimated economic value: $3,283,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Post gate dielectric processing for semiconductor device fabrication2025
Semiconductor device and method2025
Magnetic random access memory and manufacturing method thereof2025
Chip structure with conductive layer2025
Flexible merge scheme for source/drain epitaxy regions2025
Semiconductor device with phosphorus-doped epitaxial features2025
Method and electrical device for training cross-domain classifier2025
Structure and method for MRAM devices with a slot via2025
Method of forming a stress reduction structure for metal-insulator-metal capacit2025
Dielectric inner spacers in multi-gate field-effect transistors2025
Semiconductor memory device with spacer protection and method for forming same u2025
Method of forming package structure by using a wafer chuck with adjustable curve2025