Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth

Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth

US Patent 5882401 · Granted Mar 16, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photomask blank, photomask and fabrication method thereof2010
Phase-shift photomask-blank, phase-shift photomask and fabrication method thereo2009
Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus2007
Heat treatment device and heat treatment method2006
Semiconductor wafer and vapor phase growth apparatus2004
Semiconductor wafer and production method therefor2004
Photomask blank, photomask and method of manufacture2004
Photomask blank and photomask2004
Phase shift mask blank, phase shift mask, and methods of manufacture2003
Production method for silicon epitaxial wafer and silicon epitaxial wafer2003
Phase shift mask and method of manufacture2003
Phase shift mask blank, phase shift mask and method of manufacture2003