Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Planarization method by use of particle dispersion and subsequent thermal flow

Planarization method by use of particle dispersion and subsequent thermal flow

US Patent 5837603 · Granted Nov 17, 1998

Estimated economic value: $6,913,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Active area bonding compatible high current structures2015
Active area bonding compatible high current structures2014
Active area bonding compatible high current structures2013
Active area bonding compatible high current structures2012
Method to improve source/drain parasitics in vertical devices2012
Method of forming a semiconductor layer2011
Active area bonding compatible high current structures2010
Method of forming a semiconductor isolation trench2010
Stressor integration and method thereof2009
Method for forming plasma enhanced deposited, fully oxidized PSG film2007
Active area bonding compatible high current structures2007
Enhanced plasma etch process2007