Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Oxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectric

Oxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectric

US Patent 5811343 · Granted Sep 22, 1998

Estimated economic value: $1,063,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Core for food products mold2022
Decreasing neural network inference times using softmax approximation2020
Aqueous cleaning techniques and compositions for use in semiconductor device man2017
Aqueous cleaning techniques and compositions for use in semiconductor device man2014
Isolation structure in field device2011
Video mail server with reduced frame loss2007
Approach to improve ellipsometer modeling accuracy for solving material optical 2007
Method for forming an integrated circuit with high voltage and low voltage devic2007
Pyramid-shaped capacitor structure2006
Method for testing for blind hole formed in wafer layer2003
Method of reducing dark current for an image sensor device via use of a polysili2003
CMOS image sensor n-type pin-diode structure2003