Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

Use of oxalyl chloride to form chloride-doped silicon dioxide films of silicon substrates

US Patent 5721176 · Granted Feb 24, 1998

Estimated economic value: $13,594,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Parallel plate electron multiplier with ion feedback suppression2006
Method for growing thin silicon oxides on a silicon substrate using chlorine pre2002
Computer-controlled chemical dispensing with alternative operating modes1996
Dialkyl amino pyridine catalysts which are bound to inorganic matrices and proce1995
Process for producing uretidione dimers of isocyanates using catalysts which are1994
Sub-valent molybdenum, tungsten, and chromium amides as sources for thermal chem1991
Chemical vapor deposition (CVD) process for plasma depositing silicon carbide fi1991
Chemical vapor deposition (CVD) process for the thermally depositing silicon car1991
Arsenate dopant sources and method of making the sources1989