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Home › Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results

Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results

US Patent 5600578 · Granted Feb 4, 1997

Estimated economic value: $13,750,000 ⓘ

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