Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link

Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link

US Patent 5593905 · Granted Jan 14, 1997

Estimated economic value: $7,359,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for array of MEMS elements2025
Barrier structure within a microelectronic enclosure2025
System and method for MEMS devices2025
Multi-level microelectromechanical system structure with non-photodefinable orga2025
Erasable writable substrates and methods of manufacture2025
Electrostatic actuator with 4-bit digital electrode2024
Erasable writable materials2023
Erasable writable materials2021
Large format erasable writable surfaces2020
Erasable Writable Materials2020
Dielectric cladding of microelectromechanical systems (MEMS) elements for improv2018
Large format erasable writable surfaces2018