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Home › Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer

Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer

US Patent 5574296 · Granted Nov 12, 1996

Estimated economic value: $12,111,000 ⓘ

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