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Home › Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer

Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer

US Patent 5541121 · Granted Jul 30, 1996

Estimated economic value: $8,297,000 ⓘ

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