Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy

Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy

US Patent 5523700 · Granted Jun 4, 1996

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Interferometry systems and methods2021
Interferometry system and associated methods2021
Interferometry system and associated methods2019
Interferometry system and associated methods2019
Method for height control for single electron tunneling force spectroscopy and d2015
Measurement of depth and energy of buried trap states in dielectric films by sin2015
Method and apparatus for determining dopant density in semiconductor devices2012
Scanning probe characterization of surfaces2008
Scanning tunneling charge transfer microscope2003
Method for improving spatial resolution and accuracy in scanning probe microscop2001
Micromachined probes for nanometer scale measurements and methods of making such1999
Scanning capacitance - voltage microscopy1991