Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric

Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric

US Patent 5429972 · Granted Jul 4, 1995

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor field region implant methodology2002
Semiconductor field region implant methodology2002
Active region implant methodology using indium to enhance short channel performa2001
Contamination free source for shallow low energy junction implants using implant1999
Contamination free source for shallow low energy junction implants1999
Semicondutor having selectively enhanced field oxide areas and method for produc1997
Method for producing a semiconductor gate conductor having an impurity migration1997
Large tilt angle boron implant methodology for reducing subthreshold current in 1997
Large tilt angle boron implant methodology for reducing subthreshold current in 1997
Large tilt angle boron implant methodology for reducing subthreshold current in 1997
Integrated circuit fabrication using a metal silicide having a sputterdeposited 1996
Method for forming a silicide using ion beam mixing1995