Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › DRAM device comprising a stacked type capacitor and a method of manufacturing thereof

DRAM device comprising a stacked type capacitor and a method of manufacturing thereof

US Patent 5323343 · Granted Jun 21, 1994

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of manufacturing the same2000
Method of manufacturing a semiconductor device having a circuit portion and redu1999
Method of manufacturing a semiconductor device1998
Method of making asymmetric LDD transistor1996
MOSFET with assymetric lightly doped source-drain regions1995
Method of manufacturing a semiconductor device having a stacked structure formed1994
Method of manufacturing a semiconductor device having a stacked structure formed1994
LDD CMOS with wider oxide sidewall on PMOS than NMOS1993
Semiconductor device having a redundant circuit portion and a manufacturing meth1993
Manufacturing method of an electrically programmable non-volatile memory device 1993
Element isolating structure of semiconductor device suitable for high density in1992
Semiconductor memory device having bit lines formed of an interconnecting layer 1992