Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer

Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer

US Patent 5168330 · Granted Dec 1, 1992

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated cooling assembly with upper and lower channels2025
Cooling channel shape with substantially constant cross sectional area2025
Metal pads over TSV2025
Structures with through-substrate vias and methods for forming the same2025
DBI to Si bonding for simplified handle wafer2025
Heterogeneous annealing method and device2025
Mitigating surface damage of probe pads in preparation for direct bonding of a s2025
Cold plate and manifold integration for high reliability2025
Post CMP processing for hybrid bonding2025
Techniques for processing devices2025
Structures with through-substrate vias and methods for forming the same2025
Direct hybrid bonding of substrates having microelectronic components with diffe2025