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Home › Vertical bipolar transistor with recessed epitaxially grown intrinsic base region

Vertical bipolar transistor with recessed epitaxially grown intrinsic base region

US Patent 5137840 · Granted Aug 11, 1992

Estimated economic value: $12,814,000 ⓘ

Assignee

IBM

Inventors

Brian H. Desilets (13 patents)
Chang-Ming Hsieh (34 patents)
Louis L. Hsu (471 patents)

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