Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low pressure chemical vapor deposition of tungsten silicide

Low pressure chemical vapor deposition of tungsten silicide

US Patent 4684542 · Granted Aug 4, 1987

Estimated economic value: $27,720,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on2010
System and computer program product for dynamically managing power in microproce2010
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on2008
Method for dynamically managing power in microprocessor chips according to prese2008
Method and apparatus for producing duplication- and imitation-resistant identify2007
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on2007
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on2005
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on2004
Process for fabricating a field-effect transistor with a buried Mott material ox2003
Method for complementary oxide transistor fabrication2002
Dual gate field effect transistor utilizing Mott transition materials2002
Field-effect transistor with a buried mott material oxide channel2001