Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitter

Method of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitter

US Patent 4641416 · Granted Feb 10, 1987

Estimated economic value: $13,428,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electro-optical structure2021
Method and apparatus for reducing process-induced charge buildup2003
Cell based array comprising logic, transfer and drive cells2002
Method and apparatus for reducing process-induced charge buildup2002
EEPROM cell with self-aligned tunneling window2002
Optimization of S/D annealing to minimize S/D shorts in memory array2001
Floating gate memory cell structure with programming mechanism outside the read 2001
Cell based array having compute drive ratios of N:12001
Cell based array having compute/drive ratios of N:12001
Boron doped silicon capacitor plate2001
Avalanche programmed floating gate memory cell structure with program element in2000
Bipolar transistor with extended emitter1998