Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical-etch direct moat isolation process

Vertical-etch direct moat isolation process

US Patent 4418094 · Granted Nov 29, 1983

Estimated economic value: $12,312,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

FinFET with channel backside passivation layer device and method2016
Optical communication integration2012
Manufacturing method for semiconductor device to mitigate short channel effects2008
Process for forming an integrated circuit2000
Single level gate nonvolatile memory device and method for accessing the same1999
Single level gate nonvolatile memory device and method for accessing the same1999
Single gate nonvolatile memory cell and method for accessing the same1998
Method of fabricating an EPROM with high voltage transistors1997
Non-volatile memory cell having a single polysilicon gate1997
Lateral bipolar transistor1994
Process for making BiCMOS device having an SOI substrate1994
BiCMOS device having an SOI substrate and process for making the same1993