Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MIS-field effect transistor having a short channel length and method of making the same

MIS-field effect transistor having a short channel length and method of making the same

US Patent 4291321 · Granted Sep 22, 1981

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Lithography method and lithography mask2004
Contact hole fabrication with the aid of mutually crossing sudden phase shift ed2003
Field-effect-controlled transistor and method for fabricating the transistor2003
Double gated transistor2003
Static random access memory (SRAM)2002
Method for producing a semiconductor memory device with a multiplicity of memory2002
Double gated transistor2002
CMOS circuit with all-around dielectrically insulated source-drain regions2002
Method for forming a high surface area trench capacitor2001
Memory cell having trench capacitor and vertical, dual-gated transistor2001
Method for producing a capacitor2001
Process for manufacturing a CMOS circuit with all-around dielectrically insulate2000