Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self aligned method for making bipolar transistor having minimum base to emitter contact spacing

Self aligned method for making bipolar transistor having minimum base to emitter contact spacing

US Patent 4252582 · Granted Feb 24, 1981

Estimated economic value: $24,710,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for personalizing a computer vision model based on use cases2025
Programmable random logic arrays using PN isolation2010
Intelligent sensor network2010
Programmable random logic arrays using PN isolation2008
Nested design approach2008
Method of preparing and sterilizing an instrument containing package and apparat2006
Embedded inductor and method of making2005
Method of forming a dielectric substrate having a multiturn inductor2005
MLC frequency selective circuit structures2004
Method and circuit for electrical testing of isolation resistance of large capac2003
Substrate design of a chip using a generic substrate design2003
Corrosion-free multi-layer conductor2001