Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

US Patent 12477776 · Granted Nov 18, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

SOI wafers and devices with buried stressors2025
SOI wafers and devices with buried stressors2025
Mobile apparatus and method for capturing an object space2025
Metal contacts to group IV semiconductors by inserting interfacial atomic monola2025
Metal contacts to group IV semiconductors by inserting interfacial atomic monola2025
Metal contacts to group IV semiconductors by inserting interfacial atomic monola2025
Nanowire transistor with source and drain induced by electrical contacts with ne2024
Nanowire transistor with source and drain induced by electrical contacts with ne2024
Nanowire transistor with source and drain induced by electrical contacts with ne2024
Strained semiconductor using elastic edge relaxation of a stressor combined with2024
MIS contact structure with metal oxide conductor2023
MIS contact structure with metal oxide conductor2023