Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate all-around device with through-stack nanosheet 2D channel

Gate all-around device with through-stack nanosheet 2D channel

US Patent 12396212 · Granted Aug 19, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistors with backside source/drain contact and spacer2025
Transistors with backside source/drain contact and spacer2025
Air pump cover and air pump2025
Stacked FETS with contact placeholder structures2025
Condenser for drying equipment, and drying equipment2025
Power distribution network with backside power rail2025
Horizontally stacked nanosheet gate all around device structure2025
Fork sheet device with wrapped source and drain contact to prevent NFET to PFET 2025
Forksheet transistor with dual depth late cell boundary cut2025
Shower pump2025
Semiconductor device with void under source/drain region for backside contact2025
Backside gate via structure using self-aligned scheme2025