Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Etching of magnetic tunnel junction (MTJ) stack for magnetoresistive random-access memory (MRAM)

Etching of magnetic tunnel junction (MTJ) stack for magnetoresistive random-access memory (MRAM)

US Patent 12342726 · Granted Jun 24, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power distribution network with backside power rail2025
Power distribution network with backside power rail2025
Backside power rail with tight space2025
Semiconductor structure with backside metallization layers2025
Magnetoresistive random-access memory with top and bottom electrodes deposited i2025
Magnetoresistive random-access memory with top and bottom electrodes deposited i2025
Locally widened profile for nanoscale wiring structure2025
Locally widened profile for nanoscale wiring structure2025
Double patterning with selectively deposited spacer2025
MRAM integration with self-aligned direct back side contact2025
MRAM structure with a T-shaped ferromagnetic layer2025
MRAM structure with a T-shaped ferromagnetic layer2025