Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Double patterning with selectively deposited spacer

Double patterning with selectively deposited spacer

US Patent 12438047 · Granted Oct 7, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistors with backside source/drain contact and spacer2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Stacked transistors having self aligned backside contact with backside replaceme2025
Self-aligned contact (SAC) in nanosheet transistors2025
Data communication systems and methods thereof2025
Interconnect structure including patterned metal lines2025
Local interconnects having different material compositions2025
Power distribution network with backside power rail2025
Liner-less via contact2025
Backside power rail with tight space2025
Backside power rail with tight space2025
Semiconductor structure with backside metallization layers2025