Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a semiconductor device with a work-function layer having a concentration of fluorine

Method of manufacturing a semiconductor device with a work-function layer having a concentration of fluorine

US Patent 12272556 · Granted Apr 8, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Waterproof and moisture-permeable composite material2025
FinFET structures and methods of forming the same2025
Metal caps for gate structures2025
Method of forming metal gate fin electrode structure by etching back metal fill2025
Semiconductor device with a work function layer having an oxygen-blocking dopant2025
Semiconductor device and method of manufacture2025
Selective hybrid capping layer for metal gates of transistors2024
In-situ formation of metal gate modulators2024
Semiconductor device and method2024
Semiconductor device and method of manufacture2024
Pre-deposition treatment for FET technology and devices formed thereby2024
Semiconductor device and method2024