Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In-array magnetic shield for spin-transfer torque magneto-resistive random access memory

In-array magnetic shield for spin-transfer torque magneto-resistive random access memory

US Patent 12178137 · Granted Dec 24, 2024

Estimated economic value: $24,905,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Diffuser plate2025
Magnetic tunnel junction device with magnetoelectric assist2025
Magnetic tunnel junction device with magnetoelectric assist2025
MRAM-based chip identification with free random programming2025
Systems and methods for monitoring and managing memory devices2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
One-time programmable memory devices and methods2025
Stacked FETS including devices with thick gate oxide2025
Circuit architecture using transistors with dynamic dual functionality for logic2025
Gate-all-around nanosheet-FET with variable channel geometries for performance o2025
Nanosheet transistor2025
Forming dielectric sidewall and bottom dielectric isolation in Fork-FET devices2025