Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Non-volatile static random access memory bit cells with ferroelectric field-effect transistors

Non-volatile static random access memory bit cells with ferroelectric field-effect transistors

US Patent 12176023 · Granted Dec 24, 2024

Estimated economic value: $36,628,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory device structures that include a capacitor2025
Array arrangements of vertical bipolar junction transistors2025
Bipolar junction transistor arrays2025
Antenna structure2025
Local interconnect power rails and upper power rails2025
Capacitor integrated with memory element of memory cell2025
Capacitor integrated with memory element of memory cell2025
Resistive memory elements accessed by bipolar junction transistors2025
Voltage level shifter with programmable high supply voltage and high supply volt2025
Structure and method to ground reference voltage generator2025
Non-volatile current mirror circuit with programmable transistor2025
Non-volatile current mirror circuit with programmable transistor2025