Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing gate structure and method of manufacturing fin-field effect transistor

Method of manufacturing gate structure and method of manufacturing fin-field effect transistor

US Patent 12170280 · Granted Dec 17, 2024

Estimated economic value: $28,729,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gate structures for multi-gate devices2025
Gate structures for multi-gate devices2025
Method for determining immune competence against severe acute respiratory syndro2025
Transistor gate structures and methods of forming the same2025
Forming low-resistance capping layer over metal gate electrode2025
Effective work function tuning via silicide induced interface dipole modulation 2025
Hex wrench structure2025
FinFET structures and methods of forming the same2025
Nanostructure field-effect transistor (NANO-FET) with gates including a seam in 2025
Metal caps for gate structures2025
Metal caps for gate structures2025
Method of forming metal gate fin electrode structure by etching back metal fill2025