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Home › Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of forming

Nanostructure field-effect transistor (NANO-FET) with gates including a seam in p-type work function metal between nanostructures and methods of forming

US Patent 12349410 · Granted Jul 1, 2025

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