Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure including a trench having a high aspect ratio formed by etching and its manufacturing method as applied to formation of a capacitor in the semiconductor structure

Semiconductor structure including a trench having a high aspect ratio formed by etching and its manufacturing method as applied to formation of a capacitor in the semiconductor structure

US Patent 12148654 · Granted Nov 19, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure and method for fabricating same2025
Semiconductor structure having buried word line structure with dielectric layers2025
Semiconductor structure and manufacturing method thereof2025
Semiconductor device and method for manufacturing the same2025
Semiconductor structure and method for manufacturing semiconductor structure2025
Capacitor structure and method of manufacturing same, and memory2025
Fabrication method of buried wordline structure2025
Semiconductor device and manufacturing method thereof2025
Semiconductor structure and method for preparing same2024
Method and apparatus for setting wafer script, device and storage medium2024
Enhanced channel strain to reduce contact resistance in NMOS FET devices2024
Double-sided capacitor structure and method for forming the same2024