Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias

Group III nitride-based radio frequency transistor amplifiers having source, gate and/or drain conductive vias

US Patent 12113490 · Granted Oct 8, 2024

Estimated economic value: $11,666,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronic device with millimeter wave antennas2025
RF amplifier devices and methods of manufacturing including modularized designs 2025
RF amplifier devices and methods of manufacturing including modularized designs 2025
IPD components having SiC substrates and devices and processes implementing the 2025
Silicon carbide thermal bridge integrated on a low thermal conductivity substrat2025
Stacked RF circuit topology2025
Stacked RF circuit topology2025
Stacked RF circuit topology2025
Stacked RF circuit topology2025
Multi-typed integrated passive device (IPD) components and devices and processes2025
Multi-typed integrated passive device (IPD) components and devices and processes2025
Panel level packaging for multi-die products interconnected with very high densi2025