Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device

Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device

US Patent 12112983 · Granted Oct 8, 2024

Estimated economic value: $11,666,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Layout techniques and optimization for power transistors2025
Circuit and method of shutdown for bias network in high voltage amplifier2025
Edge encapsulation for high voltage devices2025
Parasitic capacitance reduction in GaN-on-silicon devices2025
Parasitic capacitance reduction in GaN-on-silicon devices2025
Parasitic capacitance reduction in GaN-on-silicon devices2025
Extrinsic field termination structures for improving reliability of high-voltage2025
High voltage stacked transistor amplifier2024
Monolithic multi-I region diode limiters2024
PIN diodes with multi-thickness intrinsic regions2024
Solderable and wire bondable part marking2024
Semiconductor device and method of forming monolithic surge protection resistor2024