Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitride films with improved etch selectivity for 3D NAND integration

Nitride films with improved etch selectivity for 3D NAND integration

US Patent 12040180 · Granted Jul 16, 2024

Estimated economic value: $133,340,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Plasma-enhanced deposition of film stacks2025
Etch stop layer2024
Film stack simplification for high aspect ratio patterning and vertical scaling2024
Selective deposition of etch-stop layer for enhanced patterning2024
Manifold valve for controlling multiple gases2024
Depositing a carbon hardmask by high power pulsed low frequency RF2023
PECVD apparatus for in-situ deposition of film stacks2023
Manifold valve for multiple precursors2022
Selective deposition of etch-stop layer for enhanced patterning2021
Selective deposition with atomic layer etch reset2021
Substrate processing chamber with showerhead having cooled faceplate2021
Deposition of aluminum oxide etch stop layers2020