Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Selective deposition of etch-stop layer for enhanced patterning

Selective deposition of etch-stop layer for enhanced patterning

US Patent 11094542 · Granted Aug 17, 2021

Estimated economic value: $728,240,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-laye2025
Mask encapsulation to prevent degradation during fabrication of high aspect rati2025
Mask encapsulation to prevent degradation during fabrication of high aspect rati2025
Carbon based depositions used for critical dimension control during high aspect 2025
Carbon based depositions used for critical dimension control during high aspect 2025
Film stack simplification for high aspect ratio patterning and vertical scaling2024
Tin oxide thin film spacers in semiconductor device manufacturing2024
Nitride films with improved etch selectivity for 3D NAND integration2024
Chamfer-less via integration scheme2024
Selective deposition of etch-stop layer for enhanced patterning2024
Selective deposition of etch-stop layer for enhanced patterning2024
Selective deposition of etch-stop layer for enhanced patterning2024