Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Back-side deep trench isolation structure for image sensor

Back-side deep trench isolation structure for image sensor

US Patent 11955496 · Granted Apr 9, 2024

Estimated economic value: $14,186,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure having a silicon active layer formed over a SiGe etch st2025
Apparatus and method for wafer bonding2025
Semiconductor-on-insulator wafer having a composite insulator layer2025
RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer 2025
Structure for embedded gettering in a silicon on insulator wafer2025
Conductive contact for ion through-substrate via2025
Conductive contact for ion through-substrate via2025
Method of optimizing film deposition process in semiconductor fabrication by usi2025
Flat STI surface for gate oxide uniformity in Fin FET devices2025
Method for wafer bonding including edge trimming2025
Back-side deep trench isolation structure for image sensor2025
Back-side deep trench isolation structure for image sensor2025