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Home › Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices

Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices

US Patent 11930715 · Granted Mar 12, 2024

Estimated economic value: $16,242,000 ⓘ

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