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Home › Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)

Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)

US Patent 11869561 · Granted Jan 9, 2024

Estimated economic value: $9,963,000 ⓘ

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